11/02/2009 13:23:00

4DS Non-Volatile Memory to Disrupt $60B Market

FREMONT, CA--(Marketwire - February 10, 2009) - 4DS, Inc. is actively

seeking partners to produce its low cost non-volatile memory, a type

of Resistive Random Access Memory (RRAM) that can be made using

significantly less of the manufacturing mask steps than comparable

memory technologies. 4DS, Inc.'s revolutionary RRAM non-volatile

memory exhibits the density of FLASH memory with the speed of DRAM,

and is manufactured using a proprietary process that can easily be

ported into existing semiconductor fabs.

"4DS memory has the potential to replace all existing semiconductor

memories and can be manufactured in a fraction of the process mask

steps above standard CMOS as comparable memory technologies such as

FLASH and DRAM," said Kurt Pfluger, CEO of 4DS, Inc. "The 4DS method

uses existing semiconductor processes and requires fewer changes to

the semiconductor manufacturing equipment, enabling simple

manufacturing through a technology that can be scaled significantly

farther than NAND or NOR FLASH."

"Partnering with an industry leader will enable a leapfrog

opportunity to displace the $60B semiconductor memory market and take

in embedded memory applications as well," said Pfluger.

4DS, Inc.'s RRAM is a high-capacity non-volatile memory with fast

switching speeds measured below 5ns, and with an endurance of 1

billion write/read cycles. RRAM has the potential to become the front

runner among memory technologies. RRAM exhibits lower programming

currents than PRAM or MRAM without sacrificing programming

performance, retention or endurance. Compared to PRAM, RRAM operates

at a faster timescale, while compared to MRAM, it has a simpler,

smaller cell structure (MRAM = 16F squared 4DS = 4F squared) Compared

to FLASH Memory and Racetrack Memory, RRAM requires lower voltages

and lower currents and enabling the use in low power applications.

About 4DS, Inc.

4DS, Inc. is a non-volatile semiconductor memory company located in

Silicon Valley. 4DS, Inc. is producing the next generation of memory

products offering high capacity, high performance and low cost. 4DS

has developed a new, low-cost process for mass-production. 4DS,

Inc.'s revolutionary RRAM is produced using a proprietary process

which easily fit into existing semiconductor fabs.

4DS, Inc. is a privately held US corporation located in Fremont,

California and is a subsidiary of 4D-S Pty Ltd, an Australian

Corporation. For more information, please visit www.4-D-S.com.

Contact:

Kurt Pfluger

4DS, Inc.

408/219/6490

kurt@4-d-s.com

This announcement was originally distributed by Hugin. The issuer is

solely responsible for the content of this announcement.

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